SI4214DY-T1-GE3
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SI4214DY-T1-GE3

Nombor Bahagian Pengeluar
SI4214DY-T1-GE3
Pengilang / jenama
Vishay
Penerangan
MOSFET 2N-CH 30V 8.5A 8-SOIC
Helaian data

SI4214DY-T1-GE3 PDF - English

SI4214DY-T1-GE3 PDF - Italia

SI4214DY-T1-GE3 PDF - Deutsch

SI4214DY-T1-GE3 PDF - Suomi

Status RoHS
Lead free / RoHS Compliant
Siri
TrenchFET®
Kuantiti
7813
  • 1 pcs

    -
  • 2,500 pcs

    0.09769

Atribut Produk

Nombor Bahagian SI4214DY-T1-GE3
Pengeluar Vishay Siliconix
Penerangan MOSFET 2N-CH 30V 8.5A 8-SOIC
Siri TrenchFET®
Status Bahagian Obsolete
Jenis FET 2 N-Channel (Dual)
Ciri FET Standard
Salurkan ke Voltan Sumber (Vdss) 30V
Semasa - Saliran berterusan (Id) @ 25 ° C 8.5A
Rds On (Max) @ Id, Vgs 23.5 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id 2.5V @ 250µA
Caj Gate (Qg) (Max) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 15V
Kuasa - Maks 3.1W
Suhu Operasi -55°C ~ 150°C (TJ)
Jenis Pemasangan Surface Mount
Pakej / Kes 8-SOIC (0.154", 3.90mm Width)
Pakej Peranti Pembekal 8-SO

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